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Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69
Figure 1: Simulation setup of the quartz tube (Ø 5 cm).
Figure 2: Influence of the total volumetric inflow on the stationary metal vapor concentration along the quar...
Figure 3: Influence of the total volumetric inflow on the development of the metal vapor concentration along ...
Figure 4: Process pressure dependence of the metal vapor concentration along the quartz tube: simulated metal...
Figure 5: SnO2 NWs grown on a-plane sapphire substrates at various process pressures and powder temperatures:...
Figure 6: Growth experiments for an increased process time: variation of the process time from (a) 8 min, (b)...
Figure 7: Simulated gas exchange in the quartz tube from 100% Ar to the O2/Ar mixture (5% O2 in Ar) showing t...
Figure 8: Pulsed gas inflow for the elongation of the NW length: (a) schematic diagram of the pulsed gas infl...
Figure 9: Comparison of the laterally aligned NW lengths: for different process times (black, compare to Figure 6) an...